Martin Gall

Title: The Innovations of Martin Gall

Introduction

Martin Gall is an accomplished inventor based in South Burlington, Vermont. He holds a total of seven patents, showcasing his significant contributions to the field of technology, particularly in dynamic random access memory (DRAM) systems. His innovative work has had a profound impact on memory technology.

Latest Patents

One of Gall's latest patents is a memory cell for dynamic random access memory (DRAM). This memory cell includes a transistor and a capacitor, utilizing a silicon-filled vertical trench as the capacitor. A vertical transistor is superposed over the trench in a silicon chip. An epitaxial layer is formed at the top of the fill in the trench to impart seed information to the primarily polysilicon silicon fill. A polysilicon layer is deposited over the top surface of the chip, which is apertured over the trench and has its sidewalls oxidized. The opening is then refilled with epitaxial silicon, creating an inversion layer that serves as the channel of the transistor, while the deposited polysilicon layer functions as the word line. Additionally, another silicon layer is deposited over the epitaxial layer to serve as the bit line. The source/drain regions of the transistor are formed at the merger of the deposited layer with the fill in the trench and the polysilicon layer that serves as the bit line.

Another notable patent is a device with an asymmetrical channel dopant profile. This method improves the doping profile in the channel region of a DRAM array device. It includes contradoping via ion implantation through the bit line contact opening made during processing. This doping method increases the concentration of dopants in the channel region on the bit line side of the array, enhancing the off current behavior of the device. The tilt angles for ion implantation can be adjusted for maximum off current efficiency, depending on the aspect ratio of the contact opening.

Career Highlights

Throughout his career, Martin Gall has worked with prominent companies such as Siemens Aktiengesellschaft and International Business Machines Corporation (IBM). His experience in these leading organizations has contributed to his expertise in memory technology and semiconductor devices.

Collaborations

Gall has collaborated with notable professionals in the field, including Johann Alsmeier and Karanam Balasubramanyam. These collaborations have further enriched his work and innovations in the technology sector.

Conclusion

Martin Gall's contributions to