The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2000
Filed:
Sep. 30, 1997
Applicant:
Inventors:
Karanam Balasubramanyam, Hopewell Junction, NY (US);
Martin Gall, South Burlington, VT (US);
Jeffrey P Gambino, Gaylorsville, CT (US);
Jack A Mandelman, Stormville, NY (US);
Assignees:
Siemens Aktiengesellschaft, Munich, DE;
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438291 ; 438530 ; 438910 ;
Abstract
Reduction of gate-induced-drain-leakage in metal oxide semiconductor (MOS) devices is achieved by performing an anneal in a non-oxidizing ambient. In one embodiment, the anneal is performed in a argon and/or ammonia ambients after gate sidewall oxidation that forms the spacers.