Munich, Germany

Markus Vossebürger

This inventor holds 1 USPTO granted patent. Top assignee: Infineon Technologies Ag. Active years: 2005.


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 19(Granted Patents)


Company Filing History:


Years Active: 2005

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Innovations of Markus Vossebürger

Introduction

Markus Vossebürger is a notable inventor based in Munich, Germany. He has made significant contributions to the field of semiconductor technology. His work focuses on enhancing the performance and reliability of semiconductor components.

Latest Patents

Markus Vossebürger holds a patent for a semiconductor component with enhanced avalanche ruggedness. This invention relates to a semiconductor component that, at its nominal current, experiences a voltage applied between two electrodes that is 6% or more above the static reverse voltage at the same temperature during an avalanche event. This innovation is crucial for improving the durability and efficiency of semiconductor devices.

Career Highlights

Markus Vossebürger is associated with Infineon Technologies AG, a leading company in semiconductor solutions. His expertise in semiconductor technology has positioned him as a valuable asset in the industry. He has been instrumental in developing technologies that enhance the performance of electronic devices.

Collaborations

Throughout his career, Markus has collaborated with talented professionals, including Andreas Schlögl and Markus Schmitt. These collaborations have fostered innovation and contributed to advancements in semiconductor technology.

Conclusion

Markus Vossebürger's contributions to semiconductor technology, particularly through his patent for enhanced avalanche ruggedness, highlight his role as an influential inventor in the field. His work continues to impact the industry positively.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to [email protected]
Loading…