Markus Gruetzner

Title: The Innovations of Markus Gruetzner

Introduction

Markus Gruetzner is a notable inventor based in Munich, Germany. He has made significant contributions to the field of integrated circuits, particularly in the area of circuit design security. His innovative work has led to the development of a patent that addresses the prevention of circuit design theft.

Latest Patents

Gruetzner holds a patent for an integrated circuit designed to prevent circuit design theft. This patent includes various embodiments that describe an integrated circuit featuring at least seven planar field effect transistors. These transistors are arranged in a common substrate with a maximum feature size in accordance with a technology node of up to 65 nm. Each transistor consists of a first source/drain diffusion region, a second source/drain diffusion region, a channel region, and a gate terminal. Notably, the common source/drain diffusion regions are free of vertical terminal contact material, enhancing the security of the design.

Career Highlights

Markus Gruetzner is currently employed at Infineon Technologies AG, a leading company in semiconductor solutions. His work at Infineon has allowed him to focus on innovative technologies that push the boundaries of integrated circuit design. Gruetzner's expertise in this field has positioned him as a key player in the development of secure circuit designs.

Collaborations

Throughout his career, Gruetzner has collaborated with esteemed colleagues such as Thomas Kuenemund and Peter Egger. These collaborations have fostered an environment of innovation and have contributed to the advancement of technology in the semiconductor industry.

Conclusion

Markus Gruetzner's contributions to integrated circuit technology exemplify the importance of innovation in preventing circuit design theft. His patent and work at Infineon Technologies AG highlight his commitment to advancing secure technology solutions. His achievements serve as an inspiration for future inventors in the field.