Munich, Germany

Markus A Zuegel

This inventor holds 1 USPTO granted patent. Top assignee: International Business Machines Corporation. Active years: 1984.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Markus A Zuegel. Retrieved from https://idiyas.com/inventor/markus-a-zuegel

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 1984

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1 patent (USPTO):Explore Patents

Title: Markus A. Zuegel and His Polysilicon Process Invention.

Introduction

Markus A. Zuegel is an inventor associated with Munich, Germany, and International Business Machines Corporation. His patent work addresses the adjustment of etched opening edges in polysilicon layers.

Latest Patents

The available information identifies one patent for Zuegel: “Method of Adjusting the Edge Angle in Polysilicon.” The invention describes pretreating a polysilicon layer before forming a photoresist mask, using a mixture of five parts water, one to three parts ammonia, and 0.25 to one part hydrogen peroxide. The treatment, advantageously performed at 40°C to 70°C, allows the steepness of the etched opening edges to be adjusted. Zuegel is associated with 1 patent.

Career Highlights

Zuegel’s documented patent contribution concerns semiconductor processing, specifically controlling the edge angles of openings etched into polysilicon. The patent lists International Business Machines Corporation as his associated company.

Collaborations

The provided information names Wolfgang Augstein and Peter U. Frasch as Zuegel’s coworkers. Their shared association provides context for his professional connections, though no specific joint patent work is identified here.

Conclusion

Markus A. Zuegel’s recorded invention presents a chemical pretreatment method for adjusting polysilicon edge angles, reflecting a focused contribution to semiconductor manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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