San Jose, CA, United States of America

Mark Rubin

This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: Vlsi Technology, Inc.. Active years: 2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mark Rubin. Retrieved from https://idiyas.com/inventor/mark-rubin-bhicvo1z

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 52(Granted Patents)


Company Filing History:


Years Active: 2001

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2 patents (USPTO):Explore Patents

Title: Mark Rubin: Innovator in Integrated Circuit Technology

Introduction

Mark Rubin is a notable inventor based in San Jose, CA. He has made significant contributions to the field of integrated circuit technology, holding a total of 2 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

Rubin's latest patents include innovative methods that improve the manufacturing processes of integrated circuits. One of his patents, titled "Trench-diffusion corner rounding in a shallow-trench (STI) process," describes an isolation structure formed using a shallow trench isolation process. This method involves creating a layer of buffer oxide on a substrate, followed by a layer of nitride. The nitride and buffer oxide layers are patterned to form a trench area, which is then oxidized to provide rounded corners at the perimeter. The substrate is subsequently etched to create a trench within this area.

Another significant patent is "Incorporation of nitrogen-based gas in polysilicon gate re-oxidation to improve hot carrier performance." This method introduces nitrogen-based gas during the re-oxidation of gate oxide layers to enhance hot carrier performance. The process begins with the formation of a gate oxide layer, followed by the deposition of gate material. The gate material is then etched to create a gate structure, and during re-oxidation, nitrogen-based gas is introduced to nitridize the re-oxidized portions of the gate oxide layer.

Career Highlights

Mark Rubin is currently employed at VLSI Technology, Inc., where he continues to innovate in the semiconductor industry. His expertise in integrated circuit technology has positioned him as a valuable asset to his company.

Collaborations

Throughout his career, Rubin has collaborated with esteemed colleagues, including Victor C. Liang and Bijan Moslehi. These collaborations have furthered advancements in the field and contributed to the success of various projects.

Conclusion

Mark Rubin's contributions to integrated circuit technology through his patents and work at VLSI Technology, Inc. highlight his role as an influential inventor in the semiconductor industry. His innovative approaches continue to shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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