Birkenshaw, United Kingdom

Mark R Dyball

This inventor holds 1 USPTO granted patent. Top assignee: The Secretary of State for Defence in Her Britannic Majesty's Government. Active years: 1993.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mark R Dyball. Retrieved from https://idiyas.com/inventor/mark-r-dyball

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 22(Granted Patents)


Company Filing History:


Years Active: 1993

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1 patent (USPTO):Explore Patents

Title: Mark R Dyball: Innovator in Substitutional Carbon in Silicon

Introduction

Mark R Dyball is a notable inventor based in Birkenshaw, GB. He has made significant contributions to the field of materials science, particularly with his innovative work on substitutional carbon in silicon. His research has implications for various technological advancements, especially in semiconductor technology.

Latest Patents

Mark R Dyball holds 1 patent for his invention related to substitutional carbon in silicon. This patent represents a crucial step in enhancing the properties of silicon, which is vital for the electronics industry.

Career Highlights

Dyball is currently employed by the Secretary of State for Defence in Her Britannic Majesty's Government. His role involves applying his expertise in materials science to support defense technologies and innovations.

Collaborations

Throughout his career, Mark has collaborated with esteemed colleagues such as Leigh Trevor Canham and Keith G Barraclough. These partnerships have fostered a productive environment for research and development in their respective fields.

Conclusion

Mark R Dyball's contributions to the field of materials science, particularly through his patent on substitutional carbon in silicon, highlight his innovative spirit and dedication to advancing technology. His work continues to influence the development of new materials in the electronics sector.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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