North Chili, NY, United States of America

Mark Padrnos


Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: Mark Padrnos: Innovator in Security Technology

Introduction

Mark Padrnos is an accomplished inventor based in North Chili, NY (US). He has made significant contributions to the field of security technology, particularly in the area of embedded systems. His innovative approach has led to the development of a unique patent that enhances the protection of cryptographic processing circuits.

Latest Patents

Mark Padrnos holds a patent for an "Adaptable microcontroller based security monitor." This invention provides a method for protecting embedded cryptographic processing circuits, software, and data contained within electronic equipment. The method involves monitoring parameter values generated by sensors within the equipment. It evaluates these values to determine if they fall within a predetermined range of acceptable values. If any parameter values are found to be outside this range, the method utilizes a modified operating profile to ensure continued monitoring and evaluation.

Career Highlights

Mark Padrnos is associated with Harris Corporation, where he applies his expertise in security technology. His work focuses on developing innovative solutions that address the challenges of protecting sensitive information in electronic devices. His contributions have been instrumental in advancing the capabilities of security systems.

Collaborations

Mark collaborates with Christopher David Mackey, a fellow innovator at Harris Corporation. Together, they work on projects that aim to enhance the security features of electronic equipment.

Conclusion

Mark Padrnos is a notable inventor whose work in security technology has led to significant advancements in protecting embedded systems. His patent for an adaptable microcontroller based security monitor exemplifies his commitment to innovation in this critical field.

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