Mark N Slamowitz

Title: Mark N Slamowitz: Innovator in Memory Technology

Introduction

Mark N Slamowitz is a notable inventor based in Aloha, Oregon, recognized for his contributions to integrated circuit memory technology. He holds a patent for a unique memory cell design that addresses the challenges posed by alpha radiation.

Latest Patents

Slamowitz's patent, titled "Soft error immune memory," introduces an alpha radiation immune integrated circuit memory cell. This innovative design features a pair of secondary transistors that cross-couple primary transistors to form a flow, secondary storage node. The secondary transistors are biased to a standby current, which, in conjunction with the parasitic capacitances in the new cell, establishes a time constant sufficient to maintain the state of the secondary nodes during an alpha hit on the primary nodes. This design achieves alpha immunity without the need for added capacitance. Additionally, a write boost circuit increases the current in the secondary transistors during write operations. The memory array consists of rows of such cells, with all secondary emitters of each row coupled to a common emitter standby current source.

Career Highlights

Mark N Slamowitz has made significant strides in the field of memory technology through his work at Bipolar Integrated Technology, Inc. His innovative approach to memory cell design has positioned him as a key figure in advancing integrated circuit technology.

Collaborations

Slamowitz collaborates with Robert Beverly Lefferts, contributing to the development of cutting-edge memory solutions.

Conclusion

Mark N Slamowitz's work in developing soft error immune memory technology showcases his innovative spirit and dedication to enhancing integrated circuit memory systems. His contributions continue to influence the field and pave the way for future advancements.