Shrewsbury, NJ, United States of America

Mark L Leadbeater

This inventor holds 1 USPTO granted patent. Top assignee: Bell Communications Research, Inc.. Active years: 1992.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mark L Leadbeater. Retrieved from https://idiyas.com/inventor/mark-l-leadbeater

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 31(Granted Patents)


Company Filing History:


Years Active: 1992

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1 patent (USPTO):Explore Patents

Title: Mark L Leadbeater: Innovator in Non-Volatile Memory Technology

Introduction

Mark L Leadbeater is a notable inventor based in Shrewsbury, NJ (US). He has made significant contributions to the field of non-volatile memory technology. His innovative work has implications for the integration of memory elements with semiconductor devices.

Latest Patents

Mark L Leadbeater holds a patent for a method related to the preparation of epitaxial ferromagnetic manganese aluminum. This patent describes a non-volatile memory element based on a thin epitaxial film of manganese aluminum on a III-V semiconductor. The film's stability at elevated temperatures allows for the monolithic integration of non-volatile memory elements with III-V semiconductor electronic and photonic devices. He has 1 patent to his name.

Career Highlights

Mark L Leadbeater is associated with Bell Communications Research, Inc., where he has been involved in groundbreaking research and development. His work has contributed to advancements in semiconductor technology and memory systems.

Collaborations

Some of his notable coworkers include Silas J Allen, Jr and Ramamoorthy Ramesh. Their collaborative efforts have furthered research in the field of semiconductor devices.

Conclusion

Mark L Leadbeater's contributions to non-volatile memory technology highlight his role as an innovator in the semiconductor industry. His work continues to influence the integration of advanced memory systems with electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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