Mark Hsiao

Title: The Innovations of Mark Hsiao

Introduction

Mark Hsiao is a notable inventor based in Tracy, California, recognized for his contributions to the field of thin-film transistor (TFT) fabrication. With a total of three patents to his name, Hsiao has made significant advancements in the technology that underpins modern electronic devices.

Latest Patents

One of Hsiao's latest patents involves a low-temperature process for TFT fabrication. This method includes the deposition of a gate metal onto a substrate to form the gate of the thin-film transistor. The substrate can be either an insulative substrate or a color filter. In the first method, the gate metal is subjected to an H-plasma treatment. Following this, a gate insulating film is deposited onto the gate. The second method involves the deposition of first and second layers of gate insulating film at different rates. One layer is deposited under H or argon dilution conditions, enhancing insulating properties, while the other layer reduces the overall compressive stress of the dual-layer gate insulator. The third method focuses on forming an n-silicon film on a substrate by maintaining a flow of silane, phosphine, and hydrogen gas into a processing chamber at substrate temperatures of about 300°C or less.

Career Highlights

Mark Hsiao is currently employed at Applied Materials, Inc., a leading company in the semiconductor and display industries. His work has been pivotal in advancing the technology used in electronic devices, making him a valuable asset to his organization.

Collaborations

Hsiao has collaborated with notable colleagues such as Takako Takehara and Quanyuan Shang, contributing to a dynamic work environment that fosters innovation and creativity.

Conclusion

Mark Hsiao's contributions to the field of thin-film transistor fabrication highlight his innovative spirit and dedication to advancing technology. His patents reflect a commitment to improving electronic device performance and efficiency.