Murray, UT, United States of America

Mark Hatch

This inventor holds 1 USPTO granted patent. Top assignee: Western Digital Technologies, Inc.. Active years: 2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mark Hatch. Retrieved from https://idiyas.com/inventor/mark-hatch

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: Mark Hatch - Innovator in Non-Volatile Memory Technology

Introduction

Mark Hatch is a notable inventor based in Murray, UT (US). He has made significant contributions to the field of non-volatile memory technology. His innovative work has led to the development of a unique patent that addresses power and thermal management in storage devices.

Latest Patents

Mark Hatch holds a patent for an integrated power and thermal management system in non-volatile memory. This patent describes a non-volatile storage device that includes non-volatile memory cells, clocked circuitry, and control circuits. The control circuits are designed to process commands for accessing memory cells while regulating power consumption, temperature, and clock frequencies based on feedback signals.

Career Highlights

Mark Hatch is currently employed at Western Digital Technologies, Inc. His work at this leading technology company has allowed him to focus on advancing storage solutions. His expertise in non-volatile memory has positioned him as a key player in the industry.

Collaborations

Some of Mark's coworkers include Reed P Tidwell and David Wagner. Their collaboration has contributed to the innovative environment at Western Digital Technologies, Inc.

Conclusion

Mark Hatch's contributions to non-volatile memory technology exemplify the impact of innovation in the tech industry. His patent reflects a commitment to improving storage device efficiency and performance.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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