Forest Hills, NY, United States of America

Mark Grigorievich Ramm

This inventor holds 9 USPTO granted patents and 1 EPO patent. Top assignee: The Fox Group, Inc.. Active years: 2002-2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mark Grigorievich Ramm. Retrieved from https://idiyas.com/inventor/mark-grigorievich-ramm

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0


Average Co-Inventor Count = 6.0

ph-index = 5

Forward Citations = 97(Granted Patents)


Location History:

  • Rego Park, NY (US) (2003)
  • Forest Hills, NY (US) (2002 - 2006)

Company Filing History:


Years Active: 2002-2006

Loading Chart...
Loading Chart...
9 patents (USPTO):Explore Patents

Title: **Mark Grigorievich Ramm: Innovator in High-Temperature Materials and Crystal Growth**

Introduction

Mark Grigorievich Ramm is a distinguished inventor based in Forest Hills, NY, renowned for his contributions to high-temperature materials and crystal growth technologies. With a total of nine patents to his name, Ramm has made significant strides in the field of semiconductor materials, particularly in developing innovative solutions that address the challenges of crystal growth.

Latest Patents

Ramm's latest patents showcase his expertise in creating advanced materials for high-performance applications. One notable invention is the **Tantalum-Based Crucible**. This crucible is designed to maintain thermal stability at high temperatures, making it ideal for the growth of large, bulk AlN, AlGaN, or other nitride single crystals. Constructed from specially treated tantalum, the crucible undergoes a carburization process to ensure it resists deformation when subjected to extreme conditions. Additionally, a layer of TaN is applied to the surfaces that interact with nitride vapors during crystal growth, enhancing its durability.

Another significant patent is for an **Apparatus for Growing Low Defect Density Silicon Carbide**. This invention details a method for producing SiC crystals with minimal defects, such as dislocations and micropipes, through a sublimation growth technique. The process is divided into two stages: the initial stage allows for normal axial growth while expanding laterally, which minimizes defect propagation in the final product. The second stage focuses on enhancing normal growth while suppressing lateral expansion, leading to a product of superior quality.

Career Highlights

Ramm's career is marked by a commitment to innovation and excellence. His notable patent portfolio reflects his deep understanding of materials science and engineering. He has successfully addressed complex challenges in semiconductor manufacturing, enabling advancements in electronics and other related fields.

Collaborations

Throughout his career, Mark Grigorievich Ramm has collaborated with esteemed colleagues, including Yury Alexandrovich Vodakov and Evgeny Nikolaevich Mokhov. Together, they have worked on various projects that have pushed the boundaries of material science, further solidifying their reputation as leaders in their respective fields.

Conclusion

Mark Grigorievich Ramm's contributions to high-temperature materials and crystal growth technologies have positioned him as a significant figure in innovation. With multiple patents that reflect his expertise and dedication, Ramm continues to influence the future of semiconductor technologies through his work at The Fox Group, Inc. His ongoing research and collaborations promise to yield even more exciting advancements in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…