Mark E Law

Title: Mark E Law - Innovator in High Electron Mobility Transistors

Introduction

Mark E Law is a prominent inventor based in Gainesville, FL (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of high electron mobility transistors (HEMTs). His innovative work focuses on improving heat dissipation in these devices, which is crucial for their performance and reliability.

Latest Patents

Mark E Law holds 1 patent for his invention titled "High electron mobility transistors with improved heat dissipation." This patent describes III-nitride based HEMTs, such as AlGaN/GaN HEMTs on Silicon substrates, designed to enhance heat dissipation. The semiconductor device features a substrate with a top surface and a bottom surface, a nucleation layer on the top surface, a transition layer on the nucleation layer, a buffer layer on the transition layer, a barrier layer on the buffer layer, and a metal layer filling a via hole that extends from the bottom surface of the substrate to the bottom surface of the transition layer.

Career Highlights

Mark E Law is associated with the University of Florida Research Foundation, Incorporated. His work at this institution has allowed him to explore advanced semiconductor technologies and contribute to the academic and practical applications of his inventions.

Collaborations

Some of his notable coworkers include Fan Ren and Stephen John Pearton. Their collaboration has likely fostered an environment of innovation and research excellence in the field of semiconductor devices.

Conclusion

Mark E Law's contributions to high electron mobility transistors represent a significant advancement in semiconductor technology. His innovative approach to improving heat dissipation is essential for the future development of efficient electronic devices.