Company Filing History:
Years Active: 2007
Title: Mark D Bordelon: Innovator in Plasma Enhanced Deposition Technology
Introduction
Mark D Bordelon is a notable inventor based in Indialantic, Florida. He has made significant contributions to the field of materials science, particularly in the development of methods for forming advanced oxide films. His innovative approach has led to the creation of a patented technology that enhances the performance of semiconductor devices.
Latest Patents
Mark D Bordelon holds a patent for a "Method for forming plasma enhanced deposited, fully oxidized PSG film." This method involves introducing silane gas and a dopant gas, such as phosphine, into a chamber containing a substrate. The chamber is pressurized, and energy is applied to create a plasma, which may utilize dual frequency energy. The specific gas rates and pressure are carefully selected to produce a plasma enhanced deposited oxide film on a substrate, achieving a Si—O—Si bond peak absorbance in the infrared spectrum of at least 1092 cm.
Career Highlights
Mark is currently employed at Intersil Americas Inc., where he continues to work on innovative technologies in the semiconductor industry. His expertise in plasma deposition techniques has positioned him as a valuable asset to his team and the company.
Collaborations
Throughout his career, Mark has collaborated with talented individuals such as Katie H Pentas and Jack H Linn. These collaborations have fostered an environment of innovation and creativity, leading to advancements in their respective fields.
Conclusion
Mark D Bordelon's contributions to plasma enhanced deposition technology exemplify the spirit of innovation in the semiconductor industry. His patented methods and collaborative efforts continue to influence advancements in materials science.