The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 29, 2007

Filed:

Sep. 30, 2004
Applicants:

Katie H. Pentas, Palm Bay, FL (US);

Mark D. Bordelon, Indialantic, FL (US);

Jack H. Linn, Cadillac, MI (US);

Inventors:

Katie H. Pentas, Palm Bay, FL (US);

Mark D. Bordelon, Indialantic, FL (US);

Jack H. Linn, Cadillac, MI (US);

Assignee:

Intersil Americas, Inc., Milipitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming a plasma enhanced deposited oxide film on a substrate includes introducing into a chamber containing the substrate silane gas and a dopant gas such as phosphine. The chamber is pressurized and energy is applied to create a plasma. The energy may be a dual frequency energy. The gas rates and pressure are selected to produce a plasma enhanced deposited oxide film on a substrate having a Si—O—Si bond peak absorbance in the IR spectrum of at least 1092 cm.


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