Blacksburg, VA, United States of America

Marius Orlowski

This inventor holds 3 USPTO granted patents. Top assignee: Virginia Tech Intellectual Properties Inc.. Active years: 2015-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Marius Orlowski. Retrieved from https://idiyas.com/inventor/marius-orlowski-gcvc01s8

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 66.7

Average Co-Inventor Count = 2.4

ph-index = 1

Forward Citations = 4(Granted Patents)


Location History:

  • Pembroke, VA (US) (2015)
  • Blacksburg, VA (US) (2017)

Company Filing History:


Years Active: 2015-2026

Loading Chart...
3 patents (USPTO):Explore Patents

Title: Marius Orlowski: Innovator in Memory Technology

Introduction

Marius Orlowski is a notable inventor based in Blacksburg, VA (US). He has made significant contributions to the field of memory technology, holding 3 patents that showcase his innovative approach to electronic devices.

Latest Patents

One of his latest patents is for a resistive volatile/non-volatile floating electrode logic/memory cell. This invention introduces a resistive floating electrode device (RFED) that provides a logic cell or non-volatile storage, as well as dynamic or static random access memory. The RFED is designed to be extremely compact, with individual cells scalable to the minimum available lithographic feature size. The programming of the device is facilitated by limiting current to a compliance current level, allowing the cell to be written to either the 0 or 1 state. A unique feature of this invention allows for selective operation of a cell as a diode or in a volatile or non-volatile storage mode within the same memory array. Additionally, a series connection of three or more RFEDs can be utilized as adaptive, neural, or chaotic logic cells.

Another significant patent involves multiple exposure with image reversal in a single photoresist layer. This method allows for multiple patterned exposures of a single layer of image reversal resist, responding to respective exposures as either a positive or negative resist. This innovative approach enables the formation of complex resist structures while reducing the complexity of lithographic processes by half or more. An automated regimen can be followed to evaluate different combinations of masks to produce the desired resist structure shape.

Career Highlights

Marius Orlowski is associated with Virginia Tech Intellectual Properties, Inc., where he continues to develop groundbreaking technologies. His work has positioned him as a key figure in the advancement of memory technology.

Collaborations

He has collaborated with notable coworkers, including Coumba Ndoye and Tong Liu, contributing to various innovative projects.

Conclusion

Marius Orlowski's contributions to memory technology through his patents reflect his innovative spirit and dedication to advancing electronic devices. His work continues to influence the field and inspire future developments.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…