Marlborough, MA, United States of America

Marion M Garver

This inventor holds 2 USPTO granted patents. Top assignee: Digital Equipment Corporation. Active years: 1996-1998.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Marion M Garver. Retrieved from https://idiyas.com/inventor/marion-m-garver

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.4

ph-index = 2

Forward Citations = 118(Granted Patents)


Location History:

  • Marlborough, MA (US) (1996)
  • Marlboro, MA (US) (1998)

Company Filing History:


Years Active: 1996-1998

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2 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Marion M. Garver

Introduction

Marion M. Garver is a notable inventor based in Marlborough, MA (US). She has made significant contributions to the field of integrated circuit manufacturing, holding 2 patents that showcase her expertise and innovative spirit.

Latest Patents

Garver's latest patents include a methodology for in situ etch stop detection and control of plasma. This method describes a process for etching a dielectric layer to form a via to an underlying conductive layer. The technique involves monitoring electromagnetic energy from plasma emission radiation to determine the ratio of species in the plasma, which indicates the onset of an etch stop phenomenon. The process continues until the ratio exceeds a predetermined threshold, at which point the plasma reactor is cleaned. This method is particularly useful for forming vias between conductive layers in integrated circuits.

Another significant patent by Garver is the shallow trench isolation process for high aspect ratio trenches. This method focuses on planarizing the surface of a silicon wafer during integrated circuit manufacture. It involves coating etched trenches with a silicon nitride protective liner, followed by a conformal layer of silicon oxide. The conformal oxide is then steam annealed to densify it, and the surface is etched and polished to achieve a substantially planar surface.

Career Highlights

Garver has had a distinguished career at Digital Equipment Corporation, where she has applied her innovative techniques to advance the field of semiconductor manufacturing. Her work has contributed to the development of more efficient and effective processes in the industry.

Collaborations

Throughout her career, Garver has collaborated with notable colleagues, including Richard A. Bickford and Steven S. Cooperman. These collaborations have further enhanced her contributions to the field.

Conclusion

Marion M. Garver's innovative patents and career at Digital Equipment Corporation highlight her significant impact on integrated circuit manufacturing. Her methodologies continue to influence the industry, showcasing her role as a leading inventor.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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