Kanagawa, Japan

Marina Hiyama

USPTO Granted Patents = 4 

Average Co-Inventor Count = 2.4

ph-index = 1

Forward Citations = 9(Granted Patents)


Location History:

  • Atsugi, JP (2020)
  • Kanagawa, JP (2023)
  • Ibaraki, JP (2024)

Company Filing History:


Years Active: 2020-2025

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4 patents (USPTO):Explore Patents

Title: Innovations by Marina Hiyama

Introduction

Marina Hiyama is a prominent inventor based in Kanagawa, Japan. She has made significant contributions to the field of semiconductor technology, holding three patents that showcase her innovative spirit and technical expertise. Her work focuses on enhancing the functionality and efficiency of electronic devices.

Latest Patents

Marina Hiyama's latest patents include a highly functional semiconductor device, a display device, and an electronic device. The semiconductor device features a first transistor and a second transistor, with intricate connections between their electrodes. The first transistor is a p-channel transistor, while the second is an n-channel transistor. Her display device patent describes a method for operating a display element that allows for the application of high voltage, enhancing the performance of the display.

Career Highlights

Marina Hiyama is associated with Semiconductor Energy Laboratory Co., Ltd., where she continues to push the boundaries of semiconductor technology. Her innovative designs and patents have positioned her as a key player in the industry, contributing to advancements in electronic devices.

Collaborations

Some of her notable coworkers include Satoshi Yoshimoto and Koji Kusunoki, who collaborate with her on various projects within the semiconductor field.

Conclusion

Marina Hiyama's contributions to semiconductor technology through her patents reflect her dedication to innovation and excellence. Her work continues to influence the development of advanced electronic devices, making her a significant figure in the industry.

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