Semiconductor Energy Laboratory Co., Ltd.

Marina Hiyama

Koji Kusunoki

Kazunori Watanabe

Susumu Kawashima

Satoshi Yoshimoto

Motoharu Saito

Kouhei Toyotaka

Shigeru Onoya

A highly functional semiconductor device is provided. The semiconductor device includes a first transistor and a second transistor. The first transistor includes a first semiconductor layer, a first gate electrode, a first electrode, and a second electrode. The second transistor includes a second semiconductor layer, a second gate electrode, a third electrode, and a fourth electrode. The first gate electrode and the second gate electrode are connected to each other, and the second electrode and the third electrode are connected to each other. A first insulating layer, a second insulating layer, and a second semiconductor layer are stacked over the first semiconductor layer. The first insulating layer is less likely to diffuse hydrogen than the second insulating layer. The second insulating layer contains oxide, the first semiconductor layer contains polycrystalline silicon, and the second semiconductor layer contains a metal oxide. The first transistor is a p-channel transistor and the second transistor is an n-channel transistor.

Semiconductor device, display device, and electronic device

A display device in which high voltage can be applied to a display element is provided. A display element includes a pixel provided with a display element including a pixel electrode and a common electrode, and the pixel is electrically connected to a first data line and a second data line. Supply of a first potential to the pixel through the first data line and supply of a second potential to the pixel through the second data line are performed concurrently, and then a third potential is supplied to the pixel through the second data line, whereby the first potential held in the pixel is changed to a fourth potential, and the fourth potential is applied to the pixel electrode. Here, the second potential is a potential calculated based on the first potential. When the value of the second potential is less than or equal to a potential applied to the common electrode, the third potential is higher than the potential applied to the common electrode. In contrast, when the value of the second potential is greater than or equal to the potential applied to the common electrode, the third potential is lower than the potential applied to the common electrode.

Method for operating display device with potentials higher and lower than maximum and minimum potentials generated by source driver circuit

Electronic computer with icon

Growing community of inventors

Kanagawa, Japan

Marina Hiyama