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Years Active: 2009-2020
Title: The Innovative Contributions of Marie-Françoise Armand
Introduction
Marie-Françoise Armand is a notable inventor based in Vaulnaveys-le-Haut, France. He has made significant contributions to the field of nanotechnology, particularly in the growth of semiconductor nanowires. With a total of 4 patents to his name, Armand's work has implications for various electronic devices.
Latest Patents
Armand's latest patents include a process for growing at least one nanowire using a transition metal nitride layer obtained in two steps. This innovative process involves forming a nucleation layer on a substrate, which is essential for the growth of the nanowire. The formation of this nucleation layer includes the deposition of a transition metal layer, followed by nitridation to create a transition metal nitride layer suitable for nanowire growth. Another significant patent involves an electronic device containing nanowires, equipped with a transition metal buffer layer. This device comprises a substrate, at least one semiconductor nanowire, and a buffer layer formed by a transition metal nitride layer.
Career Highlights
Throughout his career, Armand has worked with prominent organizations such as the Commissariat à l'Énergie Atomique et aux Énergies Alternatives and Aledia. His experience in these institutions has allowed him to advance his research and contribute to the development of cutting-edge technologies.
Collaborations
Armand has collaborated with notable colleagues, including Bérangère Hyot and Benoit Amstatt. These partnerships have fostered innovation and have been instrumental in the success of his projects.
Conclusion
Marie-Françoise Armand's contributions to the field of nanotechnology and his innovative patents highlight his role as a leading inventor. His work continues to influence the development of advanced electronic devices.