Company Filing History:
Years Active: 2008
Title: Maria Ryan - Innovator in Non-Volatile Memory Technology
Introduction
Maria Ryan is a distinguished inventor based in Tynemouth, GB. She has made significant contributions to the field of non-volatile memory technology, particularly through her innovative work at Atmel Corporation. With a focus on enhancing memory array characteristics, Maria has developed solutions that address critical challenges in digital logic states.
Latest Patents
Maria holds a patent for the SONOS memory array with improved read disturb characteristics. This invention involves a PMOS non-volatile memory array utilizing SONOS transistors. The design features program and erase threshold voltages that represent digital logic states of zero and one, optimized to enhance read disturb characteristics. The threshold voltages are linearly convergent and separated by at least 0.5 volts, ensuring a charge retention time of at least 10 years. This innovative approach allows for a read voltage that can be maintained flat without intersecting the threshold voltages, thereby improving the reliability of memory transistors.
Career Highlights
Throughout her career, Maria has demonstrated a commitment to advancing memory technology. Her work at Atmel Corporation has positioned her as a key player in the development of cutting-edge memory solutions. With her expertise, she has contributed to the evolution of non-volatile memory systems, making them more efficient and reliable.
Collaborations
Maria has collaborated with notable colleagues, including Gust Perlegos and Alan L. Renninger. These partnerships have fostered an environment of innovation and creativity, leading to advancements in memory technology.
Conclusion
Maria Ryan's contributions to the field of non-volatile memory technology exemplify her dedication to innovation. Her patent for the SONOS memory array highlights her ability to solve complex challenges in digital logic states. Through her work at Atmel Corporation, she continues to influence the future of memory technology.