Company Filing History:
Years Active: 2002-2004
Title: Maria J Anc: Innovator in Semiconductor Technology
Introduction
Maria J Anc is a prominent inventor based in Marlborough, MA (US), known for her significant contributions to semiconductor technology. With a total of three patents to her name, she has made remarkable advancements in the field, particularly in the creation of high-quality semiconductor-on-insulator structures.
Latest Patents
One of her latest patents is focused on an implantation process using substoichiometric oxygen doses at different energies. This invention provides a method for creating high-quality silicon-on-insulator structures through sequential steps of ion implantation and high-temperature annealing. The resulting structures feature a top silicon layer with a thickness ranging from 10-250 nm and a buried oxide layer with a thickness of 30-300 nm. The buried oxide layer exhibits a breakdown field greater than 5 MV/cm, and the density of silicon inclusions in the BOX region is less than 2×10 cm. This innovative process can be utilized to create entire SOI wafers or patterned SOI regions integrated with non-SOI regions.
Another notable patent involves methods for producing low defect density, thin-layer SOI substrates. This patent discloses a technique where a dose of selected ions is implanted into a substrate to form a buried precursor layer. The substrate is then oxidized in an atmosphere with a selected oxygen concentration, leading to the formation of an oxide surface layer. The oxidation is performed under specific temperature and time conditions to control the injection of substrate atoms, thereby reducing strain. A high-temperature annealing step is subsequently performed to produce the insulating layer within the precursor layer.
Career Highlights
Maria J Anc is currently associated with Ibis Technology Corporation, where she continues to push the boundaries of semiconductor innovation. Her work has been instrumental in advancing the technology used in semiconductor manufacturing.
Collaborations
Throughout her career, Maria has collaborated with notable colleagues, including Robert Dolan and Bernhardt F Cordts, III. These collaborations have further enriched her research and development efforts in the semiconductor field.
Conclusion
Maria J Anc stands out as a leading inventor in semiconductor technology, with her innovative patents paving the way for advancements in the industry. Her contributions continue to influence the development of high-quality semiconductor structures, showcasing her expertise and dedication to innovation.