Company Filing History:
Years Active: 2009
Title: Maria Gromova: Innovator in Microelectronics
Introduction
Maria Gromova is a prominent inventor based in Leuven, Belgium. She has made significant contributions to the field of microelectronics, particularly in the production of microcrystalline silicon germanium. Her innovative methods have the potential to enhance the performance of semiconductor devices.
Latest Patents
Maria Gromova holds a patent for a method of producing microcrystalline silicon germanium suitable for micromachining. This method involves depositing a structural SiGe layer on top of a sacrificial layer above a substrate. The substrate may contain a semiconductor device, such as a CMOS electronic circuit. The method utilizes a silicon source and a germanium source in a reaction zone to grow the structural SiGe layer. Hydrogen is introduced into the reaction zone to dilute the silicon and germanium sources. The reaction occurs at temperatures below 450 degrees Celsius, preventing degradation of electronic devices and other materials located in the substrate.
Career Highlights
Maria Gromova is affiliated with the Interuniversitair Microelektronica Centrum, commonly known as imec. Her work at imec focuses on advancing microelectronic technologies and developing innovative solutions for the semiconductor industry.
Collaborations
Maria collaborates with notable colleagues, including Ann Witvrouw and Marc Schaekers. Their combined expertise contributes to the success of their projects and the advancement of microelectronics research.
Conclusion
Maria Gromova is a trailblazer in the field of microelectronics, with her innovative methods paving the way for future advancements in semiconductor technology. Her contributions are vital to the ongoing evolution of electronic devices.