The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2009
Filed:
Jan. 24, 2006
Ann Witvrouw, Herent, BE;
Maria Gromova, Leuven, BE;
Marc Schaekers, Leuven, BE;
Serge Vanhaelemeersch, Leuven, BE;
Brenda Eyckens, Leuven, BE;
Ann Witvrouw, Herent, BE;
Maria Gromova, Leuven, BE;
Marc Schaekers, Leuven, BE;
Serge Vanhaelemeersch, Leuven, BE;
Brenda Eyckens, Leuven, BE;
Interuniversitair Microelektronica Centrum, Leuven, BE;
Abstract
A method of depositing a structural SiGe layer is presented. The structural SiGe layer may be located on top of a sacrificial layer above a substrate. The substrate may contain a semiconductor device such as a CMOS electronic circuit. The presented method uses a silicon source and a germanium source in a reaction zone to grow the structural SiGe layer. Hydrogen is introduced into the reaction zone and it may be used to dilute the silicon source and the germanium source. The resultant reaction occurs at temperatures below 450 degrees C., thereby preventing degradation of electronic device and/or other devices/materials located in the substrate.