This inventor holds 1 USPTO granted patent. Top assignees: Lpe S.p.a., University of Catania. Active years: 2025.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:

Years Active: 2025
Title: Maria Elena Fragala: Innovator in Silicon Carbide Processing
Introduction
Maria Elena Fragala is a notable inventor based in Milan, Italy. She has made significant contributions to the field of materials science, particularly in the processing of silicon carbide. Her innovative methods have the potential to enhance the efficiency of semiconductor manufacturing processes.
Latest Patents
Maria Elena Fragala holds a patent for a method for removing layers of silicon carbide, as well as a process and apparatus for cleaning epitaxial reactor components. This innovative method involves several steps, including submerging a bulk piece in a first solution containing nitric acid, followed by a second solution with hydrofluoric acid and an oxidizing agent. Finally, the bulk piece is submerged in a third solution containing deionized water until the silicon carbide layer detaches. This method is particularly advantageous for cleaning components of an epitaxial reactor after their use in silicon carbide deposition processes. She has 1 patent to her name.
Career Highlights
Throughout her career, Maria has worked with prominent organizations, including LPE S.p.A. and the University of Catania. Her experience in these institutions has allowed her to develop and refine her innovative techniques in semiconductor processing.
Collaborations
Maria has collaborated with various professionals in her field, including her coworker Giovanni Franco. Their joint efforts have contributed to advancements in the technology surrounding silicon carbide processing.
Conclusion
Maria Elena Fragala is a pioneering inventor whose work in silicon carbide processing is paving the way for advancements in semiconductor manufacturing. Her innovative methods and dedication to her field are commendable and highlight the importance of research and development in technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile