Murrysville, PA, United States of America

Marek Skowronski


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2018

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1 patent (USPTO):Explore Patents

Title: The Innovations of Marek Skowronski

Introduction

Marek Skowronski is an accomplished inventor based in Murrysville, PA (US). He has made significant contributions to the field of memristive devices, particularly through his innovative patent. His work focuses on enhancing the manufacturing processes of resistive random-access memory (RRAM) cells.

Latest Patents

Marek Skowronski holds a patent titled "Deterministic seeding of switching filament in oxide-based memristive devices." This patent describes a method for manufacturing an RRAM cell that includes providing a metal-insulator-metal (MIM) stack and exposing a subsection of this stack to particle bombardment and/or radiation. This exposure creates localized defects in the functional layer of the MIM stack, which reduces the required forming voltage of the RRAM cell. Furthermore, it allows for precise control over the location of a conductive filament created during the device's forming process.

Career Highlights

Marek Skowronski is affiliated with Carnegie Mellon University, where he continues to advance research in the field of memristive devices. His innovative approach has garnered attention in the academic community, contributing to the development of next-generation memory technologies.

Collaborations

Marek has collaborated with notable colleagues, including Mohamed Abdeltawab Abdelmoula and Abhishek A Sharma. These partnerships have further enriched his research and development efforts in the field.

Conclusion

Marek Skowronski's contributions to the field of memristive devices through his patent and work at Carnegie Mellon University highlight his role as an influential inventor. His innovative methods are paving the way for advancements in memory technology.

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