The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 12, 2018

Filed:

May. 01, 2014
Applicant:

Carnegie Mellon University, Pittsburgh, PA (US);

Inventors:

Mohamed Abdeltawab Abdelmoula, Pittsburgh, PA (US);

Marek Skowronski, Murrysville, PA (US);

Abhishek A. Sharma, Pittsburgh, PA (US);

James A. Bain, Pittsburgh, PA (US);

Assignee:

Carnegie Mellon University, Pittsburgh, PA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/085 (2013.01); H01L 45/1233 (2013.01); H01L 45/1246 (2013.01); H01L 45/1253 (2013.01); H01L 45/146 (2013.01); H01L 45/165 (2013.01);
Abstract

A method for manufacturing an RRAM cell includes providing a metal-insulator-metal stack and exposing a subsection of a MIM stack to particle bombardment and/or radiation. Exposing a subsection of the MIM stack to particle bombardment and/or radiation forms localized defects in the functional layer of the MIM stack, thereby reducing the required forming voltage of the RRAM cell and further providing precise control over the location of a conductive filament created in the MIM stack during forming of the device.


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