Company Filing History:
Years Active: 2019
Title: Marco A Zungia: Innovator in LDMOS Transistor Technology
Introduction
Marco A Zungia is a notable inventor based in Berkeley, California. He has made significant contributions to the field of semiconductor technology, particularly in the development of LDMOS transistors. His innovative work has led to advancements that enhance the performance and efficiency of electronic devices.
Latest Patents
Marco A Zungia holds a patent for "LDMOS transistors including resurf layers and stepped-gates, and associated systems and methods." This patent describes a lateral double-diffused metal-oxide-semiconductor field effect (LDMOS) transistor that features a silicon semiconductor structure. The structure includes a base layer, a p-type reduced surface field effect (RESURF) layer, a p-body, and various regions that contribute to its functionality. The design aims to improve the efficiency and reliability of high-voltage applications.
Career Highlights
Marco A Zungia is currently employed at Maxim Integrated Products, Inc., where he continues to innovate in the semiconductor industry. His work focuses on enhancing the performance of LDMOS transistors, which are crucial for various electronic applications. With a patent portfolio that includes one significant patent, he has established himself as a key player in his field.
Collaborations
Throughout his career, Marco has collaborated with talented individuals such as John Xia and Badredin Fatemizadeh. These collaborations have fostered an environment of innovation and have contributed to the advancement of semiconductor technologies.
Conclusion
Marco A Zungia is a distinguished inventor whose work in LDMOS transistor technology has made a lasting impact on the semiconductor industry. His contributions continue to influence the development of efficient electronic devices.