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Title: Maosheng Hao: Innovator in Quantum Dot Technology
Introduction
Maosheng Hao is a prominent inventor based in Singapore, known for his significant contributions to the field of quantum dot technology. With a focus on indium nitride (InN) and indium gallium nitride (InGaN) quantum dots, Hao has developed innovative methods that enhance the performance of light-emitting diodes (LEDs). His work has led to the filing of 2 patents, showcasing his expertise and commitment to advancing technology.
Latest Patents
Hao's latest patents involve the formation of indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD). These quantum dots are embedded in single and multiple InGaN/InGaN quantum wells (QWs) and are formed using TMIn and/or Triethylindium (TEIn) and Ethyldimethylindium (EDMIn) as antisurfactants during MOCVD growth. The photoluminescence wavelength from these dots ranges from 480 nm to 530 nm. Controlled amounts of TMIn and other indium precursors are crucial in triggering the formation of dislocation-free quantum dots, as are the subsequent flows of ammonia and TMIn. This method can be readily utilized for the growth of the active layers of blue and green LEDs.
Career Highlights
Throughout his career, Maosheng Hao has worked at the National University of Singapore, where he has contributed to various research projects and innovations in semiconductor technology. His work has been instrumental in advancing the understanding and application of quantum dots in optoelectronic devices.
Collaborations
Hao has collaborated with notable colleagues, including Soo Jin Chua and Peng Li, to further enhance the research and development of quantum dot technologies. Their combined expertise has led to significant advancements in the field.
Conclusion
Maosheng Hao's contributions to quantum dot technology have positioned him as a key figure in the field. His innovative patents and collaborative efforts continue to influence the development of advanced light-emitting devices.