Mao-Hsiung Kuo

Title: Mao-Hsiung Kuo: Innovator in High Polysilicon Resistors

Introduction

Mao-Hsiung Kuo is a notable inventor based in Kao-hsiung, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of high polysilicon resistors. His innovative methods have the potential to enhance the performance and stability of electronic components.

Latest Patents

Mao-Hsiung Kuo holds a patent for a method of improving the voltage coefficient of resistance of high polysilicon resistors. This patent describes a process that involves forming a high polysilicon resistor over a dielectric layer. The method includes providing a polysilicon resistor with a doped polysilicon layer that has a specific voltage coefficient of resistance and grain boundaries. By applying a controlled level of DC current for a predetermined duration, the doped polysilicon layer is stressed to partially melt it without causing breakdown. This process allows for recrystallization, resulting in a more stable and saturated resistance.

Career Highlights

Kuo is associated with Taiwan Semiconductor Manufacturing Company Limited, where he applies his expertise in semiconductor fabrication. His work has contributed to advancements in the reliability and efficiency of electronic devices.

Collaborations

Mao-Hsiung Kuo has collaborated with notable colleagues, including Yung-Lung Hsu and Shun-Liang Hsu. These collaborations have fostered innovation and development in their respective fields.

Conclusion

Mao-Hsiung Kuo's contributions to the field of semiconductor technology, particularly through his patent on high polysilicon resistors, highlight his role as an influential inventor. His work continues to impact the industry positively.