Boston, MA, United States of America

Manuel Toledo-Quinones

This inventor holds 1 USPTO granted patent. Top assignee: Boston University. Active years: 2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Manuel Toledo-Quinones. Retrieved from https://idiyas.com/inventor/manuel-toledo-quinones

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 54(Granted Patents)


Company Filing History:


Years Active: 2000

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1 patent (USPTO):Explore Patents

Title: Manuel Toledo-Quinones: Inventor in Chemical Vapor Deposition

Introduction

Manuel Toledo-Quinones is an inventor associated with Boston University in Boston, Massachusetts. His work includes a patented method for controlling chemical vapor deposition through closed-loop monitoring of growth rate.

Latest Patents

The available information identifies one patent associated with Toledo-Quinones: “Method for Closed Loop Control of Chemical Vapor Deposition Process.” The invention controls the application of a surface coating by comparing the measured growth rate with a target setpoint. It then adjusts a primary input parameter to bring the measured rate toward, or maintain it at, that setpoint. This closed-loop approach is designed to regulate the coating process based on growth-rate feedback.

Career Highlights

Toledo-Quinones is associated with Boston University, where his work connects to process control and surface-coating technology. His patent describes a feedback-based method for managing chemical vapor deposition.

Collaborations

Michael Alan Gevelber is identified as a coworker. The information provided does not specify the nature of their collaboration.

Conclusion

Manuel Toledo-Quinones’s identified patent applies closed-loop growth-rate control to chemical vapor deposition, highlighting a practical approach to regulating surface-coating processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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