This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Texas Instruments Corporation. Active years: 2011.
Company Filing History:
Years Active: 2011
Title: Innovations of Manuel Quevedo Lopez
Introduction
Manuel Quevedo Lopez is an accomplished inventor based in Richardson, TX (US). He has made significant contributions to the field of semiconductor technology, particularly in improving the reliability of Metal Oxide Semiconductor (MOS) transistors. His innovative approach has garnered attention in the industry.
Latest Patents
Manuel holds a patent for a process titled "Nitrogen profile in high-K dielectrics using ultrathin disposable capping layers." This invention addresses the challenges associated with nitridation processes in gate dielectrics. By depositing a sacrificial layer on the gate dielectric before nitridation, he has developed a method that allows nitrogen atoms to diffuse into the gate dielectric without degrading its quality. This process has demonstrated a 20 percent reduction in nitrogen concentration at the gate dielectric-transistor substrate interface, enhancing transistor performance.
Career Highlights
Manuel is currently employed at Texas Instruments Corporation, where he continues to work on advancements in semiconductor technology. His expertise in high-k gate dielectrics has positioned him as a valuable asset in the field.
Collaborations
Manuel has collaborated with Husam N Alshareef, contributing to the development of innovative solutions in semiconductor technology.
Conclusion
Manuel Quevedo Lopez's contributions to the field of semiconductor technology through his patent and work at Texas Instruments Corporation highlight his role as a leading inventor. His innovative methods are paving the way for improved transistor reliability and performance.