Mani R Gupta

Title: The Innovative Mind of Mani R Gupta

Introduction: Mani R Gupta, based in Wappingers Falls, NY, is an accomplished inventor known for his contributions to the field of materials science. With a focus on the development of advanced polyimides, his work has significant implications for semiconductor manufacturing processes.

Latest Patents: Gupta holds a notable patent for "Silicon-containing polyimides as oxygen etch stop and dual dielectric." This innovation leverages silicon-containing polyimides in a variety of applications, particularly as an oxygen etch barrier in metal lift-off processes. His patent describes a method where a lift-off layer is applied on a substrate, followed by a layer of silicon-containing polyimide and a layer of photoresist. Using a CF₄/O₂ gas mixture in reactive ion etching, he successfully transfers patterns into the silicon-containing polyimide, allowing for precise metal structure fabrication.

Career Highlights: Throughout his career, Gupta has demonstrated a deep commitment to innovation while working with International Business Machines Corporation (IBM). His technical expertise and inventive spirit have enabled him to tackle complex challenges in materials engineering and semiconductor technology.

Collaborations: Mani R Gupta has collaborated with esteemed colleagues such as Krishna Gandhi Sachdev and Ranee W Kwong. These partnerships have allowed him to advance his research and explore further innovations within the industry, highlighting the importance of teamwork in achieving technological progress.

Conclusion: In summary, Mani R Gupta is a distinguished inventor whose work with silicon-containing polyimides has paved the way for advancements in semiconductor manufacturing. His contributions not only reflect individual ingenuity but also signify the collaborative spirit inherent in the field of innovation. The future holds exciting potentials for Gupta as he continues to evolve his ideas and push the boundaries of technology.