Shunan, Japan

Manami Oshio

USPTO Granted Patents = 3 

 

Average Co-Inventor Count = 2.6

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2020-2025

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3 patents (USPTO):Explore Patents

Title: Manami Oshio: Innovator in Silicon Etching Technologies

Introduction

Manami Oshio is a prominent inventor based in Shunan, Japan. She has made significant contributions to the field of semiconductor manufacturing through her innovative work in silicon etching technologies. With a total of 3 patents to her name, her inventions are paving the way for advancements in the industry.

Latest Patents

Oshio's latest patents include a silicon etching liquid and methods for producing silicon devices and processing silicon substrates. One of her notable inventions is a silicon etching liquid characterized by containing a quaternary ammonium hydroxide and a quaternary ammonium salt, along with water. This etching liquid has a specific concentration range for the quaternary ammonium salt, which enhances its effectiveness. Additionally, she has developed an etching solution that selectively etches silicon carbonitride without affecting silicon oxide, which is crucial for manufacturing semiconductor devices.

Career Highlights

Manami Oshio is currently employed at Tokuyama Corporation, where she continues to innovate in the field of semiconductor technology. Her work focuses on developing solutions that improve the efficiency and selectivity of etching processes, which are vital for the production of high-quality semiconductor devices.

Collaborations

Oshio has collaborated with notable colleagues, including Katsuhiro Mori and Toshimitsu Hiraren. These partnerships have contributed to her success and the advancement of her research in silicon etching technologies.

Conclusion

Manami Oshio's contributions to the field of semiconductor manufacturing through her innovative patents are noteworthy. Her work not only enhances the efficiency of etching processes but also plays a crucial role in the development of advanced semiconductor devices.

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