Tokuyama Corporation

Manami Oshio

Katsuhiro Mori

Toshimitsu Hiraren

Seiji Tono

Yoshiki Seike

Naoto Nomura

A silicon etching liquid which is characterized by containing a quaternary ammonium hydroxide represented by formula (1), a quaternary ammonium salt represented by formula (2) and water, and which is also characterized in that the concentration of the quaternary ammonium salt represented by formula (2) is more than 1% by mass but not more than 50% by mass. (1): RRRRN·OH(In formula (1), R, R, Rand Rmay be the same groups or different groups, and each represents an optionally substituted alkyl group, aryl group or a benzyl group.) (2): RRRRN·X(In formula (2), R, R, Rand Rmay be the same groups or different groups, and each represents an optionally substituted alkyl group having from 1 to 16 carbon atoms; and X represents BF, a fluorine atom, a chlorine atom or a bromine atom.)

Silicon etching liquid, and method for producing silicon device and method for processing silicon substrate, each using said etching liquid

Silicon carbonitride with excellent dielectric and/or other properties may be used in manufacturing semiconductor devices. The manufacturing often requires etching silicon carbonitride without etching silicon oxide, but there is no known etching solution that sufficiently selectively etches silicon carbonitride containing carbon compared with silicon nitride used for the same purpose. An object of the present invention is to provide: an etching solution with a high etching selectivity ratio of silicon carbonitride to silicon oxide; a method of treating a substrate, the method including a step of bringing the etching solution into contact with the substrate; and a method of manufacturing a semiconductor device, the method including the method of treating a substrate. The object is achieved by an etching solution for etching silicon carbonitride, the etching solution composed of a homogeneous solution containing phosphoric acid, water, and a cerium ion.

Etching solution, method for treating substrate with the etching solution, and method for manufacturing semiconductor device

To provide a laminate comprising a pair of polycarbonate optical sheet or film which are laminated together through a polarizing film layer and an adhesive layer of a photochromic composition comprising (I) a polyurethane urea resin and (II) a photochromic compound and having excellent photochromic properties, adhesion, heat resistance, perspiration resistance and excellent adhesion to a lens substrate.

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Shunan, Japan

Manami Oshio