Company Filing History:
Years Active: 2020-2021
Title: Innovator Spotlight: Man-Jae Yang and His Contributions to Memory Technology
Introduction: Man-Jae Yang, an esteemed inventor based in Hwaseong-si, South Korea, has made significant contributions to the field of non-volatile memory technology. With three patents to his name, Yang is renowned for his innovative work that enhances data storage solutions, particularly his developments at Samsung Electronics Co., Ltd.
Latest Patents: One of Yang's most recent patents is focused on a non-volatile memory device and a storage device incorporating a sophisticated design. This invention features a serial pipeline structure that connects to the output stage of a First In, First Out (FIFO) memory. The FIFO memory efficiently stores data transmitted through a wave pipeline structure, utilizing multiple input and output clock signals. Additionally, a serializer is integrated to output data to an input/output pad, based on a select clock signal. This design effectively compensates for phase differences between data output and the select clock signal, significantly improving memory performance.
Career Highlights: Throughout his career, Man-Jae Yang has been instrumental in advancing technologies that support high-performance memory devices. His role at Samsung Electronics Co., Ltd. allows him to collaborate with leading experts and contribute to groundbreaking innovations in the tech industry. His patents reflect a deep understanding of semiconductor technology and a dedication to improving data management solutions.
Collaborations: Yang works alongside talented colleagues, including Dong-Su Jang and Go-Eun Jung, at Samsung Electronics. These collaborations foster a dynamic environment that encourages the exchange of ideas and promotes the development of cutting-edge technologies in memory devices.
Conclusion: Man-Jae Yang's innovative approach to memory technology exemplifies the impact of dedicated inventors in advancing the tech industry. With a growing portfolio of patents and a commitment to innovation, Yang continues to be a significant contributor to non-volatile memory advancements, paving the way for future developments in this critical field.