Mamta Bansal

Title: Mamta Bansal: Innovator in SRAM Technology

Introduction

Mamta Bansal is a distinguished inventor based in Coquitlam, Canada. She has made significant contributions to the field of semiconductor technology, particularly in the development of high-performance SRAM bit cells. Her innovative work has garnered attention in the industry and has led to the filing of a patent that showcases her expertise.

Latest Patents

Mamta Bansal holds a patent for a "Variable read/write margin high-performance soft-error tolerant SRAM bit cell." This invention addresses the challenges of single event upset (SEU) tolerance in SRAM bit cells, which are crucial for reliable memory storage. The design accommodates six-transistor (6T), eight-transistor (8T), or multi-port RAM cell configurations, fabricated using 0.18 µm or smaller CMOS processes. Notably, her invention achieves SEU tolerance without significantly increasing the cell's read and write cycle time, ensuring minimal impact on cell stability.

Career Highlights

Mamta Bansal is currently employed at PMC-Sierra, Inc., where she continues to push the boundaries of semiconductor technology. Her work has not only advanced the field but has also positioned her as a key player in the industry. With a focus on innovation, she has demonstrated her ability to solve complex engineering problems through her inventive solutions.

Collaborations

Throughout her career, Mamta has collaborated with talented individuals such as Vikram Madhukar Labhe and Gavril Margittai. These partnerships have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.

Conclusion

Mamta Bansal's contributions to SRAM technology exemplify her commitment to innovation and excellence in the field. Her patent for a soft-error tolerant SRAM bit cell highlights her ability to address critical challenges in semiconductor design. As she continues her work at PMC-Sierra, Inc., her impact on the industry is sure to grow.