Shizuoka, Japan

Makoto Yoshimura

This inventor holds 1 USPTO granted patent. Top assignee: Nokia Mobile Phones Limited. Active years: 2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Makoto Yoshimura. Retrieved from https://idiyas.com/inventor/makoto-yoshimura-nhxtbckd

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2004

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1 patent (USPTO):Explore Patents

Title: The Innovations of Makoto Yoshimura

Introduction

Makoto Yoshimura is a notable inventor based in Shizuoka, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that enhances performance and efficiency.

Latest Patents

Yoshimura holds 1 patent for a semiconductor device. This device features a buried type capacitor that is directly embedded within a semiconductor substrate. The design includes three-dimensional cavities that are aligned with each other on the substrate. A capacitor structure of a substrate-buried type is implemented inside these cavities, which improves the overall functionality of the semiconductor base bodies.

Career Highlights

Makoto Yoshimura is currently employed at Nokia Mobile Phones Limited, where he continues to innovate in the field of mobile technology. His work at Nokia has allowed him to apply his expertise in semiconductor devices to enhance mobile phone performance.

Collaborations

Yoshimura has collaborated with notable colleagues such as Takashi Iwamoto and Kenichi Hashizume. Their combined efforts in research and development have contributed to advancements in semiconductor technology.

Conclusion

Makoto Yoshimura's contributions to semiconductor technology exemplify the spirit of innovation. His work continues to influence the industry and pave the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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