Company Filing History:
Years Active: 2006-2009
Title: Makoto Mori: A Pioneer in Nonvolatile Memory Technology
Introduction
Makoto Mori is an innovative inventor based in Kodaira, Japan. He has made significant contributions to the field of nonvolatile memory technology, holding a total of three patents. His work has paved the way for advancements in memory card functionality, particularly in the realm of firmware management.
Latest Patents
Mori's most recent patents focus on a nonvolatile memory card design. This innovative card allows for the addition, modification, and changing of programs by selecting arbitrary firmware from multiple options stored on flash memory. By utilizing firmware in addition to a built-in ROM program, the memory card enhances its functionality. The desired firmware can be activated by setting it in a parameter sector and subsequently loading it into external RAM, where the control logic CPU executes the required processes. This technology has the potential to transform how memory cards are utilized in various devices.
Career Highlights
Makoto Mori is an integral part of Renesas Technology Corporation, where he contributes to groundbreaking research and product development in the field of electronics. His expertise in memory technology has made significant impacts in the industry, positioning him as a key player among contemporary inventors.
Collaborations
Throughout his career, Mori has collaborated with esteemed colleagues such as Seisuke Hirosawa and Atsushi Shikata. Their collective efforts foster an innovative environment that encourages the sharing of ideas and drives forward-thinking solutions in the technology space.
Conclusion
Makoto Mori's inventive spirit and dedication to enhancing memory card technology demonstrate his invaluable contributions to the field. His work continues to influence the landscape of nonvolatile memory solutions, making him a noteworthy inventor in the domain of electronics. As technology advances, Mori's innovations will likely play a significant role in further developments in memory systems.