Makoto Kurotobi

Title: Innovations by Makoto Kurotobi

Introduction

Makoto Kurotobi is a notable inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology. With a focus on innovative fabrication methods, Kurotobi has been awarded 2 patents for his groundbreaking work.

Latest Patents

Kurotobi's latest patents include a method for the fabrication of a semiconductor device with an interlayer insulating film formed from a plasma devoid of an oxidizing agent. This method involves creating an interlayer insulating film with a low dielectric constant by coating wiring and forming either a via hole or a contact hole in the film. The process utilizes a silicon compound that is converted into a plasma gas, which reacts to form a block insulating film containing silicon, oxygen, carbon, and hydrogen. Another patent details a method for forming an interlayer insulating film that includes several steps, such as forming a metal film on a substrate and selectively etching the insulating and metal films.

Career Highlights

Throughout his career, Kurotobi has demonstrated a commitment to advancing semiconductor technology. His innovative approaches have positioned him as a key figure in the industry. His work has not only contributed to the development of new materials but has also enhanced the efficiency of semiconductor devices.

Collaborations

Kurotobi has collaborated with several talented individuals in his field, including Yoshimi Shioya and Kouichi Ohira. These collaborations have fostered a creative environment that has led to significant advancements in semiconductor technology.

Conclusion

Makoto Kurotobi's contributions to semiconductor technology through his innovative patents highlight his expertise and dedication to the field. His work continues to influence the development of advanced semiconductor devices.