Mahsa Shoaran

Title: Mahsa Shoaran: Innovator in Low Power Nanoelectronics

Introduction

Mahsa Shoaran is a prominent inventor based in St-Sulpice, Switzerland. She has made significant contributions to the field of low power nanoelectronics, focusing on enhancing the efficiency of electronic devices. Her innovative work has led to the development of advanced technologies that improve power conversion and processing efficiency.

Latest Patents

Mahsa Shoaran holds a patent for her groundbreaking work in low power electronic devices. This patent discloses devices that exploit the sub-threshold swing, unidirectional tunneling, and low-voltage operation of steep slope-tunnel field-effect transistors (TFET). These devices are designed to enhance the power-conversion efficiency and power efficiency of electrical systems. The patent includes various applications such as a HTFET-based rectifier, a HTFET-based DC-DC charge pump converter, a HTFET-based amplifier, and a HTFET-based SAR A/D converter. Each of these devices can be utilized to create RF-powered systems with improved efficiencies.

Career Highlights

Mahsa is affiliated with the Penn State Research Foundation, where she continues to advance her research in nanoelectronics. Her work has garnered attention for its potential applications in energy harvesting and signal processing. With one patent to her name, she is recognized as a leading figure in her field.

Collaborations

Mahsa collaborates with esteemed colleagues such as Huichu Liu and Ramesh Vaddi. These partnerships enhance her research and contribute to the development of innovative technologies in low power electronics.

Conclusion

Mahsa Shoaran is a trailblazer in the realm of low power nanoelectronics, with her patent showcasing her innovative approach to improving electronic device efficiency. Her contributions are paving the way for advancements in energy harvesting and signal processing technologies.