The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2017
Filed:
May. 14, 2015
The Penn State Research Foundation, University Park, PA (US);
Huichu Liu, State College, PA (US);
Ramesh Vaddi, Viziangaram, IN;
Vijaykrishnan Narayanan, State College, PA (US);
Suman Datta, Port Matilda, PA (US);
Moon Seok Kim, State College, PA (US);
Xueqing Li, State College, PA (US);
Alexandre Schmid, Sion, CH;
Mahsa Shoaran, St-Sulpice, CH;
Unsuk Heo, State College, PA (US);
The Penn State Research Foundation, University Park, PA (US);
Abstract
Disclosed are low power electronic devices configured to exploit the sub-threshold swing, unidirectional tunneling, and low-voltage operation of steep slope-tunnel tunnel field-effect transistors (TFET) to improve power-conversion efficiency and power-efficiency of electrical systems incorporating the TFET as an electrical component to perform energy harvesting, signal processing, and related operations. The devices include a HTFET-based rectifier having various topologies, a HTFET-based DC-DC charge pump converter, a HTFET-based amplifier having an amplifier circuit including a telescopic operational transconductance amplifier, and a HTFET-based SAR A/D converter having a HTFET-based transmission gate DFF. Any one of the devices may be used to generate a RF-powered system with improved power conversion efficiencies of power harvesters and power efficiencies of processing components within the system.