Hsinchu, Taiwan

Mahmut Sinangil

USPTO Granted Patents = 2 

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2024

Loading Chart...
2 patents (USPTO):Explore Patents

Title: Mahmut Sinangil: Innovator in Memory Device Technology

Introduction

Mahmut Sinangil is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of memory device technology, holding 2 patents that showcase his innovative approach to electronic design.

Latest Patents

One of his latest patents is for a low voltage memory device, which features a twelve-transistor (12T) memory cell. This memory cell includes a transmission gate, a cross-coupled inverter circuit operably connected to the transmission gate, and a tri-state inverter connected to the cross-coupled inverter circuit. The design also incorporates another tri-state inverter that is cross-coupled to an inverter circuit. Various operations for the 12T memory cell, along with the necessary circuitry to perform these operations, are disclosed in this patent.

Another notable patent is related to bit line logic circuits and methods. This circuit includes a memory cell column coupled to a bit line pair and a write circuit that alternately biases a first end of the bit lines toward power supply and reference voltage levels during a write operation. Each of the first and second switching circuits at the second ends of the bit lines includes first and second logic circuits, each with an input terminal coupled to a corresponding bit line. The first logic circuit and switching device couple the corresponding bit line to a power supply node simultaneously with the write circuit biasing the corresponding bit line toward the power supply voltage level. The second logic circuit and switching device perform a similar function for the reference voltage level.

Career Highlights

Mahmut Sinangil is currently employed at Taiwan Semiconductor Manufacturing Company Limited, where he continues to push the boundaries of memory technology. His work has been instrumental in advancing the capabilities of memory devices, making them more efficient and effective.

Collaborations

Throughout his career, Mahmut has collaborated with notable colleagues, including Jonathan Tsung-Yung Chang and Shang-Chi Wu. These collaborations have fostered an environment of innovation and creativity, leading to groundbreaking advancements in the field.

Conclusion

Mahmut Sinangil's contributions to memory device technology are significant and impactful. His patents reflect a deep understanding of electronic design and a commitment to innovation. As he continues his work at Taiwan Semiconductor Manufacturing Company Limited, the future of memory technology looks promising.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…