This inventor holds 1 USPTO granted patent. Top assignee: At&t Bell Laboratories. Active years: 1991.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1991
Title: Mahmoud A ElHamamsy: Innovator in Photodiode Technology
Introduction
Mahmoud A ElHamamsy is a notable inventor based in New York, NY (US). He has made significant contributions to the field of photodiode technology, particularly with his innovative designs that enhance performance and reliability.
Latest Patents
ElHamamsy holds a patent for a "Restricted contact planar photodiode." This invention describes an InGaAs photodiode featuring a double layer of silicon nitride on its front surface. The dual layers serve multiple functions, including surface passivation and providing a diffusion mask for forming the p-n junction. The design includes a narrow pedestal portion that contacts the surface away from the junction edges, which helps reduce strain and leakage currents, thereby enhancing reliability. The photodiode can be either back-illuminated or front-illuminated.
Career Highlights
ElHamamsy is associated with AT&T Bell Laboratories, where he has contributed to various research and development projects. His work has been instrumental in advancing photodiode technology, making it more efficient and reliable for various applications.
Collaborations
Throughout his career, ElHamamsy has collaborated with esteemed colleagues, including Stephen R Forrest and John R Zuber. These collaborations have further enriched his research and innovations in the field.
Conclusion
Mahmoud A ElHamamsy is a distinguished inventor whose work in photodiode technology has made a lasting impact. His innovative designs and collaborations continue to influence advancements in the field.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile