Mahboob Khan

Title: Mahboob Khan: Innovator in VLSI Circuit Technology

Introduction

Mahboob Khan is a notable inventor based in Placentia, California. He has made significant contributions to the field of very large scale integrated (VLSI) circuits. His innovative work has led to advancements in the production processes and structures of these circuits.

Latest Patents

Mahboob Khan holds a patent for a "Process for and structure of high density VLSI circuits." This patent describes a process that employs techniques of self-aligned gates and contacts for field-effect transistor (FET) devices. The process enhances mask alignment tolerances, allowing for increased efficiency in the production of VLSI circuits. The use of materials with varying oxidation and etch characteristics enables selective oxidation and batch removal processes without the need for masking. This innovation results in inherently self-aligned gates and contacts, improving the density and reliability of VLSI circuits.

Career Highlights

Khan has worked at Rockwell International Corporation, where he has applied his expertise in VLSI technology. His work has contributed to the development of advanced electronic components that are crucial in modern technology.

Collaborations

Throughout his career, Mahboob Khan has collaborated with notable colleagues, including Gordon C. Godejahn, Jr. and Gary L. Heimbigner. These collaborations have furthered the advancements in VLSI circuit technology.

Conclusion

Mahboob Khan's contributions to the field of VLSI circuits have had a lasting impact on technology. His innovative processes and structures continue to influence the development of electronic components today.