Magid Yousri Dimyan

Title: Magid Yousri Dimyan: Innovator in Magnetic Memory Technologies

Introduction

Magid Yousri Dimyan is a prominent inventor based in San Diego, California, known for his significant contributions to the field of magnetic memory technologies. With a total of six patents to his name, Dimyan has made remarkable advancements in non-volatile random access memory systems.

Latest Patents

One of his latest patents is for a Magnetic Domain Random Access Memory. This innovative technology allows for the inductive switching of magnetic cells arranged in an array on a substrate. The process involves applying electrical pulses to conductors intersecting adjacent to the selected cell, enabling the cell to switch between opposite remanent states. Another notable patent is for a Bubble Memory Structure with Enhanced Data Density. This invention enhances storage density by reducing the circuit period in the storage section of the device, utilizing gap-tolerant propagation elements such as asymmetrical chevrons.

Career Highlights

Throughout his career, Dimyan has worked with notable companies, including Burroughs, Inc. and Texas Instruments Corporation. His work has significantly impacted the development of memory technologies, showcasing his expertise and innovative spirit.

Collaborations

Dimyan has collaborated with esteemed colleagues, including Carlos A. Castro and Wayne C. Hubbell, contributing to various projects that have advanced the field of magnetic memory.

Conclusion

Magid Yousri Dimyan's contributions to magnetic memory technologies have established him as a key figure in the field. His innovative patents and collaborations reflect his dedication to advancing technology and enhancing data storage solutions.