This inventor holds 1 USPTO granted patent. Top assignee: Infineon Technologies Ag. Active years: 2009.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2009
Title: Magali Hage Hassan: Innovator in Memory Device Technology
Introduction
Magali Hage Hassan is an accomplished inventor based in Grasse, France, who has made significant contributions to the field of memory devices. With a focused approach towards enhancing memory technology, she holds a patent that showcases her innovative spirit and technical expertise.
Latest Patents
Her notable patent, titled "Memory device and testing with write completion detection," presents an advanced apparatus that includes a memory cell, a reference cell, and a control unit. The control unit is responsible for initiating write processes for both the memory cell and reference cell. A detection unit is also included, linked to the reference cell, which is designed to detect the write completion of the reference cell. This innovation addresses important aspects of memory management and efficiency, illustrating Magali's forward-thinking approach to technology.
Career Highlights
Magali is currently employed at Infineon Technologies AG, a prominent company specializing in semiconductor solutions. Her role within this innovative company positions her at the forefront of memory technology development, contributing to projects that aim to enhance performance and reliability in electronic devices.
Collaborations
Throughout her career, Magali has collaborated with esteemed colleagues such as Cyrille Nicolas Dray and Stephany Bouniol. These partnerships have fostered an environment of creativity and innovation, allowing for robust discussions and shared expertise that drive advancements in their respective fields.
Conclusion
Magali Hage Hassan exemplifies the qualities of a leading inventor in the technology sector. With her patent contributions and collaborations at Infineon Technologies AG, she continues to influence the future of memory devices, paving the way for new advancements and applications in electronics. Her work is a testament to the importance of innovation in enhancing technology and improving everyday devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile