Lydia L Hwang

Title: Innovations by Lydia L Hwang

Introduction

Lydia L Hwang is a notable inventor based in Midland, MI (US). She has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. Her work focuses on methods for improving the quality and analysis of silicon used in various applications.

Latest Patents

One of her latest patents is a method for removing metal surface contaminants from silicon. This innovative technique involves sequentially contacting silicon with gaseous hydrogen fluoride followed by an aqueous solution containing at least one-half weight percent hydrogen peroxide. This method is particularly beneficial for recovering metal surface contaminants on semiconductor-grade silicon, allowing for accurate analysis of surface contamination. Another significant patent is an analytical method for converting particulate silicon into monocrystalline silicon. This method utilizes a silicon vessel to contain the particulate silicon, which is then processed to form a monolithic unit. This approach enables the determination of contaminates present in the particulate silicon, especially useful for measuring low levels of aluminum, boron, phosphorous, and carbon.

Career Highlights

Lydia L Hwang is currently employed at Hemlock Semiconductor Corporation, where she continues to innovate in the semiconductor industry. Her expertise and dedication to her work have positioned her as a key figure in her field.

Collaborations

Throughout her career, Lydia has collaborated with notable professionals, including Arthur Francis Porsche and Richard C Dumler. These collaborations have further enhanced her contributions to semiconductor technology.

Conclusion

Lydia L Hwang's innovative work in semiconductor technology has led to significant advancements in the field. Her patents reflect her commitment to improving the quality and analysis of silicon, making her a valuable contributor to the industry.