The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 1995
Filed:
Nov. 15, 1990
Richard C Dumler, Breckenridge, MI (US);
Lydia L-Y. Hwang, Midland, MI (US);
Maurice D Lovay, Saginaw, MI (US);
Daniel P Rice, Lothrop, MI (US);
Hemlock Semi-Conductor Corporation, Hemlock, MI (US);
Abstract
The instant invention is a method for converting particulate silicon into monocrystalline silicon suitable for the determination of contaminates present in the particulate silicon. The method uses a silicon vessel, with known levels of the contaminates to be determined, to contain the particulate silicon. The silicon vessel, containing the particulate silicon, is float-zone processed to form a monolithic unit of monocrystalline silicon. The concentration of contaminates in the monocrystalline silicon can then be determined by the more sensitive analytical methods known for analysis of monolithic, monocrystalline silicon. The instant method is especially useful for measuring very low levels of aluminum, boron, phosphorous, and carbon in particulate silicon.